# RF power

Chinese Researchers Solve Long-Standing GaN Chip Cooling Problem, Boost RF Power by Up to 40%

Researchers at Xi'an Electronic and Technology University report an AlN thin‑film technique that converts islanded interfacial contacts into atomically flat layers, boosting GaN RF device power density to record levels. The improvement — claimed at 30–40 percent over peers — could extend radar and communications range and reduce energy use, though commercial scaling and independent validation remain pending.